S2N7002KT n-channel enhancement mosfet elektronische bauelemente 09-apr-2010 rev. a page 1 of 4 so t -523 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low gate charge for fast switching. ? esd protected gate. applications ? power management load switch ? portable applications such as cell phones, media players, digital cameras, pda?s, video games, hand held computers, etc. package information maximum ratings (t a =25 unless otherwise specified) parameter symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 10 v continuous drain current i d 154 ma pulsed drain current tp Q 10 s i dm 618 ma continuous source current (body diode) i sd 154 ma total power dissipation p d 1 300 mw operating junction temperature range t j 150 c operating storage temperature range t stg -55~150 c note 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). device marking S2N7002KT = t6 ref. millimete r ref. millimete r min. max. min. max. a 1.50 1.70 k 0.30 0.50 b 0.75 0.95 m --- 10 o c 0.60 0.80 n --- 10 o d 0.23 0.33 s 1.50 1.70 g 0.50bsc j 0.10 0.20
S2N7002KT n-channel enhancement mosfet elektronische bauelemente 09-apr-2010 rev. a page 2 of 4 electrical characteristics (t a =25c unless otherwise specified) characteristics symbol min typ ma x unit test conditions of f characteristics ( note2 ) drain-source breakdown voltage v (br)dss 30 - - v v gs = 0v, i d = 100 a zero gate voltage drain current i dss - - 1.0 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 25 a v gs = 10v, v ds =0v on characteristics (note2) gate threshold voltage v gs(th) 0.5 1.0 1.5 v v ds =v gs , id=100 a static drain-source on resistance r ds(on) - 1.4 7.0 ? v gs =4.5v, i d =154ma - 2.3 7.5 v gs =2.5v, i d =154ma forward transfer admittance gfs - 80 - ms v ds =3v, i d =154ma dynamic characteristics input capacitance c iss - 11.5 - pf v ds =5v, v gs =0v, f=1mhz output capacitance c oss - 10 - reverse transfer capacitance c rss - 3.5 - switching characteristics turn-on delay time t d(on) - 13 - ns v ds =5.0v, v gs =4.5v, i d =75ma, r g =10 ? rise time t r - 15 - turn-off delay time t d(off) - 98 - fall time t f - 60 - source-drain diode characteristics input capacitance v sd - 0.77 0.9 v v gs =0v, i s =0.154ma pulse test pulse width Q 300 s, duty cycle Q 2
S2N7002KT n-channel enhancement mosfet elektronische bauelemente 09-apr-2010 rev. a page 3 of 4 characteristic curve
S2N7002KT n-channel enhancement mosfet elektronische bauelemente 09-apr-2010 rev. a page 4 of 4 characteristic curve
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